On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities
Identifieur interne : 000804 ( Russie/Analysis ); précédent : 000803; suivant : 000805On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities
Auteurs : RBID : Pascal:02-0276178Descripteurs français
- Pascal (Inist)
- Etat impureté, Niveau Fermi, Matériau dopé, Valence mixte, Impureté, Effet galvanomagnétique, Faisceau électron, Niveau profond, Niveau énergie, Effet rayonnement, Effet composition, Addition indium, Addition gallium, Plomb tellurure, Germanium tellurure, Manganèse tellurure, Composé ternaire, Pb1-xGexTe, Ge Pb Te, Mn Pb Te, 7155H, Pb1-yMnyTe.
English descriptors
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Abstract
The galvanomagnetic (4.2 ≤ T ≤ 300 K, B ≤ 0.1 T) properties of n-Pb1-yMnyTe (0.07 ≤ y ≤ 0.11) and n-Pb1-xGexTe (0.04 < x ≤ 0.08) doped with In and Ga (CIn 0.5 mol%, CGa 1.5-2 mol%, respectively) before and after the irradiation with fast electron (E = 6 MeV, ϕ < 1.85 x 1017 cm- 2) have been investigated. Impurity-induced deep levels EIn and EGa were observed in the alloys studied. Their energy position was determined and the energy level diagrams as a function of alloy composition were constructed. It was found that the electron irradiation has nearly no effect on the properties of Pb1-yMnyTe, while in Pb1-xGexTe it causes a transition to metal-type conductivity. It was concluded that the gallium-induced level EGa, unlike the level EIn does not stabilize the Fermi level in PbTe based alloys.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities</title><author><name sortKey="Skipetrov, E P" uniqKey="Skipetrov E">E. P. Skipetrov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Moscow State University</s1><s2>119899 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Zvereva, E A" uniqKey="Zvereva E">E. A. Zvereva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Moscow State University</s1><s2>119899 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Volkova, O S" uniqKey="Volkova O">O. S. Volkova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Moscow State University</s1><s2>119899 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Slyn Ko, E I" uniqKey="Slyn Ko E">E. I. Slyn Ko</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Material Science Problems</s1><s2>274001 Chernovtsy</s2><s3>UKR</s3><sZ>4 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Institute of Material Science Problems</wicri:noRegion></affiliation></author><author><name sortKey="Mousalitin, A M" uniqKey="Mousalitin A">A. M. Mousalitin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Moscow State Institute of Steel and Alloys</s1><s2>117936 Moscow</s2><s3>RUS</s3><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0276178</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0276178 INIST</idno><idno type="RBID">Pascal:02-0276178</idno><idno type="wicri:Area/Main/Corpus">00F327</idno><idno type="wicri:Area/Main/Repository">00ED84</idno><idno type="wicri:Area/Russie/Extraction">000804</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-5107</idno><title level="j" type="abbreviated">Mater. sci. eng., B, Solid-state mater. adv. technol.</title><title level="j" type="main">Materials science & engineering. B, Solid-state materials for advanced technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Composition effect</term><term>Deep level</term><term>Doped materials</term><term>Electron beams</term><term>Energy levels</term><term>Fermi level</term><term>Gallium additions</term><term>Galvanomagnetic effects</term><term>Germanium tellurides</term><term>Impurities</term><term>Impurity states</term><term>Indium additions</term><term>Lead tellurides</term><term>Manganese tellurides</term><term>Mixed valence</term><term>Radiation effects</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etat impureté</term><term>Niveau Fermi</term><term>Matériau dopé</term><term>Valence mixte</term><term>Impureté</term><term>Effet galvanomagnétique</term><term>Faisceau électron</term><term>Niveau profond</term><term>Niveau énergie</term><term>Effet rayonnement</term><term>Effet composition</term><term>Addition indium</term><term>Addition gallium</term><term>Plomb tellurure</term><term>Germanium tellurure</term><term>Manganèse tellurure</term><term>Composé ternaire</term><term>Pb1-xGexTe</term><term>Ge Pb Te</term><term>Mn Pb Te</term><term>7155H</term><term>Pb1-yMnyTe</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The galvanomagnetic (4.2 ≤ T ≤ 300 K, B ≤ 0.1 T) properties of n-Pb<sub>1-y</sub>Mn<sub>y</sub>Te (0.07 ≤ y ≤ 0.11) and n-Pb<sub>1-x</sub>Ge<sub>x</sub>Te (0.04 < x ≤ 0.08) doped with In and Ga (C<sub>In</sub> 0.5 mol%, C<sub>Ga</sub> 1.5-2 mol%, respectively) before and after the irradiation with fast electron (E = 6 MeV, ϕ < 1.85 x 10<sup>17</sup> cm<sup>-</sup> <sup>2</sup>) have been investigated. Impurity-induced deep levels E<sub>In</sub> and E<sub>Ga</sub> were observed in the alloys studied. Their energy position was determined and the energy level diagrams as a function of alloy composition were constructed. It was found that the electron irradiation has nearly no effect on the properties of Pb<sub>1-y</sub>Mn<sub>y</sub>Te, while in Pb<sub>1-x</sub>Ge<sub>x</sub>Te it causes a transition to metal-type conductivity. It was concluded that the gallium-induced level E<sub>Ga</sub>, unlike the level E<sub>In</sub> does not stabilize the Fermi level in PbTe based alloys.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-5107</s0></fA01><fA03 i2="1"><s0>Mater. sci. eng., B, Solid-state mater. adv. technol.</s0></fA03><fA05><s2>91-92</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Containing papers presented at the Ninth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP-IX), Rimini, Italy, 24-28th September 2001</s1></fA09><fA11 i1="01" i2="1"><s1>SKIPETROV (E. P.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZVEREVA (E. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>VOLKOVA (O. S.)</s1></fA11><fA11 i1="04" i2="1"><s1>SLYN'KO (E. I.)</s1></fA11><fA11 i1="05" i2="1"><s1>MOUSALITIN (A. M.)</s1></fA11><fA12 i1="01" i2="1"><s1>FRIGERI (C.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Physics, Moscow State University</s1><s2>119899 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Material Science Problems</s1><s2>274001 Chernovtsy</s2><s3>UKR</s3><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Moscow State Institute of Steel and Alloys</s1><s2>117936 Moscow</s2><s3>RUS</s3><sZ>5 aut.</sZ></fA14><fA15 i1="01"><s1>CNR-MASPEC Institute, Fontanini, Parco Area delle Scienze 371A</s1><s2>43010 Parma</s2><s3>ITA</s3><sZ>1 aut.</sZ></fA15><fA20><s1>416-420</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12899B</s2><s5>354000100544360880</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0276178</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science & engineering. B, Solid-state materials for advanced technology</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>The galvanomagnetic (4.2 ≤ T ≤ 300 K, B ≤ 0.1 T) properties of n-Pb<sub>1-y</sub>Mn<sub>y</sub>Te (0.07 ≤ y ≤ 0.11) and n-Pb<sub>1-x</sub>Ge<sub>x</sub>Te (0.04 < x ≤ 0.08) doped with In and Ga (C<sub>In</sub> 0.5 mol%, C<sub>Ga</sub> 1.5-2 mol%, respectively) before and after the irradiation with fast electron (E = 6 MeV, ϕ < 1.85 x 10<sup>17</sup> cm<sup>-</sup> <sup>2</sup>) have been investigated. Impurity-induced deep levels E<sub>In</sub> and E<sub>Ga</sub> were observed in the alloys studied. Their energy position was determined and the energy level diagrams as a function of alloy composition were constructed. It was found that the electron irradiation has nearly no effect on the properties of Pb<sub>1-y</sub>Mn<sub>y</sub>Te, while in Pb<sub>1-x</sub>Ge<sub>x</sub>Te it causes a transition to metal-type conductivity. It was concluded that the gallium-induced level E<sub>Ga</sub>, unlike the level E<sub>In</sub> does not stabilize the Fermi level in PbTe based alloys.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70A55H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etat impureté</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Impurity states</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Niveau Fermi</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Fermi level</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Doped materials</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Valence mixte</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Mixed valence</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Valencia mixta</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Impureté</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Impurities</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet galvanomagnétique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Galvanomagnetic effects</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Faisceau électron</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Electron beams</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Niveau profond</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Deep level</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Nivel profundo</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Niveau énergie</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Energy levels</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Effet rayonnement</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Radiation effects</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Effet composition</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Composition effect</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Efecto composición</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Addition indium</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium additions</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Addition gallium</s0><s5>14</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Gallium additions</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Plomb tellurure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Lead tellurides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Germanium tellurure</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Germanium tellurides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Manganèse tellurure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Manganese tellurides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>21</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>21</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Pb1-xGexTe</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Ge Pb Te</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Mn Pb Te</s0><s4>INC</s4><s5>55</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>7155H</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Pb1-yMnyTe</s0><s4>INC</s4><s5>92</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Métal transition</s0><s5>48</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Transition elements</s0><s5>48</s5></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Composé minéral</s0><s5>49</s5></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>49</s5></fC07><fN21><s1>161</s1></fN21><fN82><s1>PSI</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>DRIP International Conference on Defects: Recognition, Imaging and Physics in Semiconductors</s1><s2>9</s2><s3>Rimini ITA</s3><s4>2001-09-24</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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